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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
CSB507, CSD313
CSB507 CSD313
PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR
Low frequency Power Amplifier Applications
PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
4
1 2 3
B H
F
C E
DIM A B C D E F G H J K L M N O
M IN. 14.42 9.63 3.56
M A X.
N
L
O
123
D G
J M
16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7
A
O
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 2A; IB = 0.2A D.C. current gain IC = 1A; VCE = 2V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector)
All dim insions in m m .
K
VCBO VCEO IC Ptot Tj VCEsat hFE
max. max. max. max. max. max. min max.
60 60 3.0 30 150
V V A W C
1.0 V 40 320
VCBO VCEO VEBO
max. max. max.
60 V 60 V 5.0 V
Continental Device India Limited
Data Sheet
Page 1 of 3
CSB507, CSD313
Collector current Collector current (Peak value) Total power dissipation up to TC = 25C Junction temperature Storage temperature THERMAL CHARACTERISTICS From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IE = 0; VCB = 20V IB = 0; VCE = 60V Emitter cut-off current IC = 0; VEB = 4V Breakdown voltages IC = 1 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 2 A; IB = 0.2 A Base emitter on voltage IC = 1A; VCE = 2V D.C. current gain IC = 0.1A; VCE = 2V IC = 1A; VCE = 2V** Transition frequency IC = 500 mA; VCE = 5V
IC ICM Ptot Tj Tstg Rth j-c
max. 3.0 A max. 8.0 A max. 30 W max. 150 C -65 to +150 C = 4.17 C/W
ICBO ICEO IEBO VCEO VCBO VEBO VCEsat* VBE(on)* hFE* hFE*
max.
max.
0.1 mA 5.0 mA 1.0 mA 60 V 60 V 5.0 V 1.0 V 1.5 V 40 40 320 8 MHz
max. min. min. min. max. max. min. min. max. typ.
fT
* Pulse test: pulse width 300 s; duty cycle 2.0%. ** hFE classification: C: 40-80 D: 60-120 E: 100-200 F: 160-320
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
Continental Device India Limited Data Sheet Page 3 of 3
CDIL is a registered Trademark of

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